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Extra resources for Advanced Semiconductor Devices: Proceedings of the 2006 Lester Eastman Conference (Selected Topics in Electronics and Systems)
7 K. Below 150 K, donor-acceptor pair recombination appears that must be assigned to residual impurities in either the barriers or the p-layers. The current-voltage behavior reveals shunt paths that cany up to several mA at low bias voltages. Below 20 K those paths are frozen out, but the device still emits predominantly from the QW. 7 K. The deeper binding energy at low temperatures can hardly be affect by the injection current indicating that saturation of low-density states cannot be responsible for the transition between red and blue shifts.
72, pp. 25 1-260 (1 982) 2. A. , Solid State Electronics, Vol. 9, pp. 695-707 (1966) 3. , Porch A. , Physica Status Solidi (in press, 2006) 42 International Journal of High Speed Electronics a n d Systems Vol. 17, NO. com ELECTRICAL CHARACTERISTICS AND CARRIER LIFETIME MEASUREMENTS IN HIGH VOLTAGE 4H-SIC PIN DIODES P. A. Losee, C. J. Kumar, T. P. Chow, I. B. Bhat and R. J. edu. edu. edu The key material and device parameters governing the electrical performance of high voltage 4HS i c PiN diodes have been investigated using experimental results and numerical simulations.
2. Comparison of perccnt transmission curves obtained for textured, and untreated A1203samples. Experimental results suggest that our textured sapphire samples show an enhanced percent transmission of approximately 3% for wavelengths shorter than 365nm. Future 37 38 P . Batoni et al. work focuses on refinements of nanofabrication techniques, deposition of AlGaN active layers directly onto textured sapphire host substrates, and characterization of fabricated device performance. Acknowledgments This work was supported by US Army RDECOM grant # W911NF-05-2-0053.