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Three-dimensional (3D) integration is pointed out as a potential street for non-stop functionality development in built-in circuits (IC) because the traditional scaling method is confronted with remarkable demanding situations in basic and financial limits. Wafer point 3D IC can take a number of varieties, they usually often comprise a stack of a number of thinned IC layers which are vertically bonded and interconnected through via silicon through TSV.
There is a protracted string of advantages that you can actually derive from 3D IC implementation reminiscent of shape issue, density multiplication, enhanced hold up and gear, improved bandwidth, and heterogeneous integration. This booklet provides contributions by way of key researchers during this box, protecting motivations, know-how structures, functions, and different layout matters.
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Extra info for 3D Integration for VLSI Systems
Burns, J. , Chen, C. , Knect, J. , and Wyatt, P. W. (2006) A wafer- scale 3-D circuit integration technology, IEEE Trans. Electron Devices, 53(10), 25072516. Guarini, K. , Topol, A. , Newport, M. , Frank, D. , Singh, D. , Cohen, G. , Nitta, S. , et al. 13μm SOI CMOS devices and circuits transferred for three-dimensional integrated circuit fabrication, in Technical Digest of the International Electron Devices Meeting, pp. 943-945. , Nelson, D. , et al. (2006) Die stacking microarchitecture, in Proceedings of the 39th Annual IEEE/ACM International Symposium on Microarchitecture, Association for Computing Machinery, New York, pp.
2(2), 65-103. 14. , Dick, R. , and Joseph, R. (2008) Three-dimensional chip-multiprocessor run-time thermal management, IEEE Trans. Comput. Aided Des. Integr. , 27(8), 1479-1492. 13. , and Zhang, Y. 306-313. 15. Knickerbocker, J. , Patel, C. , Andry, P. , Tsang, C. , Buchwalter, L. , Horton, R. , Wright, S. , et al. (18-21 September 2005) Three dimensional silicon integration using fine pitch interconnection, silicon processing and silicon carrier packaging technology, in Proceedings of the IEEE Custom Integrated Circuits Conference, pp.
75in 280711-ch02 38 3D Integration of Integrated Circuits Though there are major limitations to this stage, especially in fine-grain integration cases, single-stratum testing is essential to improving the overall stack yield. Stack testing, which follows the single-stratum test stage, is more likely to resemble the traditional test flow, although the “flow” for the test might be artificial. 20 Cross-strata signals in 3D stacking can connect various logic circuits within any latch-to-latch path across the layers (in principle).